Electrical Properties of Ferroelectric BaMgF_4 Films on Si Substrates (<Special Issue> FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
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概要
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Electrical properties of (120)-oriented BaMgF_4 films grown on n-Si(111) substrates have been investigated. It has been found that capacitance-voltage (C-V) characteristics of Al/BaMgF_4(120)/n-Si(111) structures show hysteresis loops with counterclockwise traces and that the memory window (the loop width) is proportional to the magnitude of the voltage applied to the film. It is speculated from these phenomena that the hysteresis loop is caused by remanent polarization of the BaMgF_4 film. The value of the surface charge density, which was estimated from the memory window, was about 0.1 μC/cm^2 in a 330-nm-thick BaMgF_4 film. It has also been found from C-V and current-voltage characteristics that typical dielectric constant and average resistivity of BaMgF_4 films are 9.4 at 5 kHz and 3.6×10^<11> Ω・cm at a current density of 1 μA/cm^2, respectively.
- 社団法人応用物理学会の論文
- 1994-09-30
著者
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ISHIWARA Hiroshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Aizawa Koji
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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