Growth and Crystallinity of Ferroelectric BaMgF_4 Films on (111)-Oriented Pt Films
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概要
- 論文の詳細を見る
Growth of well (111)-oriented Pt films on SiO_2/Si(1OO) substrates and the crystallinity of BaMgF_4 films grown on the Pt(111)/Si0_2/Si(100) substrates have been investigated. It was found by X-ray diffraction analysis that well (111)-oriented Pt films with a best full-width at half maximum (FWHM) of 0.92° were grown by the ra-dio frequency (RF) magnetron sputtering method. It was also found that (120)-oriented BaMgF_4 films were grown on Pt(111)/SiO_2/Si(1OO) substrates at temperatures of about 550℃ and that the crystallinity of these BaMgF_4 films improved as the FWHM of the Pt(111) diffraction peak decreased. The best FWHM obtained for a BaMgF_4 film grown on a Pt(111)/SiO_2/Si(100) substrate was 0.97°, and crystallites in the BaMgF_4 films grown on Pt(111)/SiO_2/Si(100) substrates were larger (about 0.4 μm^2) than those in the BaMgF_4 films grown on Si(111) substrates.
- 社団法人応用物理学会の論文
- 1997-02-15
著者
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TOKUMITSU Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc
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Moriwaki Masashi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Tokumitsu E
Tokyo Inst. Technol. Yokohama Jpn
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Tokumitsu E
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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ICHIKI Tatsuya
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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TOKUMITS Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ichiki Tatsuya
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Aizawa Koji
Department of Physiology, Tokyo Medical University
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