X-Ray and Photolumineseence Characterization of a Strain-Free GaAs-on-Si Structure Formed by Anrnealing under Ultrahigh Pressure
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概要
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Characteristics of strain-free Ga,As-on-Si structures formed by annealing under ultrahigh pressure were investigated by X-ray diffraction (XRD) analysis and photoluminescence (PL) measurement. It was found that a strain-free GaAs film was formed on a Si substrate without serious degradation of the optical and crystallo-graphical properties of the film. It was also found that no additional strain or defects were generated during PL measurement at 77 K. Next, the strain-free GaAs-on-Si structure was reanrnealed at atmospheric pressure,and variation of the strain was investigated. It was found in this experiment that the strain in the GaAs film increased rapidly in the first 5 min of reannealing but within 20 to 30 min it reached to a constant value which was determined by the reannealing temperature. Finally, both XRD and PL data were compared and an intensity result on the depth distribution of strain in a GaAs film was derived.
- 社団法人応用物理学会の論文
- 1997-03-15
著者
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Jimbo Takehito
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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