Contactless Measurement of Electron Mobility in Ferroelectric Gate High-Electron-Mobility Transistor Structures
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概要
- 論文の詳細を見る
We have evaluated the electron mobility in BaMgF_4/AlGaAs/GaAs(100) high-electron-mobility transistor (HEMT) structures using a contactless mobility measurement system. It has been found that the HEMT structure can be prevented from deteriorating when the BaMgF_4 layer is properly deposited, and that dependence of the electron mobility on the N-AlGaAs layer thickness is explained using a simple parallel conduction theory. It has also been found that the electron mobility in the structures is decreased from 6300 cm^2/(V・s) to 3300 cm^2/(V・s) at room temperature as the BaMgF_4 growth temperature is increased from 550℃ to 650℃.
- 社団法人応用物理学会の論文
- 1995-05-15
著者
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ohmi Shun-ichiro
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Tokumitsu E
Tokyo Inst. Technol. Yokohama Jpn
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Tokumitsu E
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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