Fabrication and Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) Structures Using Ferroelectric (Bi, La)_4Ti_3O_<12> Films

スポンサーリンク

概要

• 論文の詳細を見る

• We have fabricated and characterized Pt/(Bi, La)_4Ti_3O_<12>(BLT)/PtTi/SiO_2/Si metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures for ferroelectric-gate transistor applications. It is demonstrated that BLT films fabricated using the metalorganlc decomposition (MOD) technique at 750℃ have excellent electrical properties. Remanent polarization 2 P* as large as 30 μC/cm^2 can be obtained. It is also shown that in the memory window increases with the area ratio S_F : S_M of the MFMIS structure and that a large memory window (3V) can be obtained for a voltage sweep of ±5V for MFMIS structures with an area ratio S_F : S_M of 1 : 15. In addition, it is demonstrated that MFMIS structures with an area ratio S_F : S_M of 1 : 1 5 have good data retention characteristics.

• 社団法人応用物理学会の論文
• 2001-09-30

著者

• Kijima Takeshi

  Frontier Collaborative Research Center Tokyo Institute Of Technology

• Tokumitsu Eisuke

  Precision And Intelligence Laboratory Tokyo Institute Of Technology

• ISOBE Takeaki

  Precision and Intelligence Laboratory, Tokyo Institute of Technology

• ISHIWARA Hiro

  Frontier Collaborative Research Center, Tokyo Institute of Technology

• Ishiwara Hiro

  Frontier Collaborative Research Center Tokyo Institute Of Technology

• Isobe Takeaki

  Precision And Intelligence Laboratory Tokyo Institute Of Technology

• Kijima Takeshi

  Frontier Collaborative Research Center, Tokyo Institute of Technology

• Tokumitsu Eisuke

  Precision & Intelligence Laboratory, Tokyo Institute of Technology,

関連論文

• In Situ Raman Spectroscopy Observation of Crystallization Process of Sol-Gel Derived Bi_La_x Ti_3O_ Films
• Characterization of Sol-gel Derived Bi_La_xTi_3O_ Films
• Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
• Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
• Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
• Realization of Adaptive Learning Function for Neuron Oscillation Circuit Using Metal-Ferroelectric-Semiconductor(MFS) FET
• Electrical Properties of La_Sr_CoO_3/Pb(Zr_Ti_)O_3/La_Sr_CoO_3 Thin Film Capacitors Formed on MgO Substrates Using the Sol-Gel Method
• Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors
• Electrical Characteristics of Neuron Pulse Oscillation Circuits Using Complementary Unijunction Transistors and MOSFETs
• Preparation of SrBi_2Ta_2O_9 Thin Films by Liquid-Delivery Metalorganic Chemical Vapor Deposition using a Double Alcoholate Source
• Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
• Partial Switching Kinetics of Ferroelectric PbZr_xTi_O_3 Thin Films Prepared by Sol-Gel Technique ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Preaparation of Ferroelectric Thin Films Using Sol-Gel Solutions Dissolved in Supercritical Carbon Dioxide
• Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
• Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
• Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
• Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2O_6/SiON Buffer Layer
• Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
• Electrical Properties of Ferroelectric Gate HEMT Structures
• Contactless Measurement of Electron Mobility in Ferroelectric Gate High-Electron-Mobility Transistor Structures
• Crystalline Quality and Electrical Properties of PbZr_xTi_O_3 Thin Films Prepared on SrTiO_3-Covered Si Substrates
• Epitaxial Growth of Ferroelectric YMnO_3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
• Fabrication of PbZr_xTi_O_3 Films on Si Structures Using Y_2O_3 Buffer Layers
• Fabrication and Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) Structures Using Ferroelectric (Bi, La)_4Ti_3O_ Films
• Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation
• Non-Volatile Metal-Ferroelectric-Insulator-Semiconductor(MFIS)FETs Using PLZT/STO/Si(100) Structures
• Proposal of a Single-Transistor-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on Interference Problem in Write Operation
• Ferroelectric Properties of BaMgF4 Films Grown on Si(100), (111), and Pt(111)/SiO2/Si(100) Structures
• Film Quality Dependence of Adaptive-Learning Processes in Neurodevices Using Ferroelectric PbZr_xTi_O_3 (PZT) Films
• Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) Structures Using (Bi, La)_4Ti_3O_ and HfO_2 Buffer Layers
• Characterization of Metal-Ferroelectric-(Metal-)Insulator-Semiconductor(MF(M)IS)Structures Using(Pb, La)(Zr, Ti)O_3 and Y_2O_3 Films
• Low-Voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride--trifluoroethylene)
• Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor (MFIS)- and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer
• Electrical Properties of Ferroelectric Gate HEMT Structures
• Data Retention and Readout Degradation Properties of Pt/Sr0.7Sm0.07Bi2.2Ta2O9/HfO2/Si Structure Ferroelectric-Gate Field Effect Transistors
• Preparation of Ferroelectric Thin Films Using Sol-Gel Solutions Dissolved in Supercritical Carbon Dioxide
• In Situ Raman Spectroscopy Observation of Crystallization Process of Sol-Gel Derived Bi4-xLaxTi3O12 Films
• Characterization of Sol-gel Derived Bi4-xLaxTi3O12 Films

もっと見る 閉じる

スポンサーリンク