Lattice Parameter Control of Epitaxially Grown Hexagonal LaF_3 Films on GaAs(111) Substrates by Incorporation of Orthorhombic YF_3
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概要
- 論文の詳細を見る
Control of lattice parameters of hexagonal LaF_3 thin films has been attempted by incorporation of orthorhombic YF_3, in order to realize lattice-matched epitaxial growth of the films on GaAs(111)B substrates. It has been found that the lattice parameter of the Y_xLa_<1-x>F_3 film is equivalently matched to that of GaAs(111) around the mixing ratio x of 0.55. It has also been found from Rutherford backscattering spectroscopy that the channeling minimum yield of the epitaxial films on GaAs(111)B substrates is relatively low (the best value is 0.36), when the mixing ratio of YF_3 is close to that of the lattice matching condition.
- 社団法人応用物理学会の論文
- 1992-04-15
著者
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Aizawa Kouji
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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RICARD Herve
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ricard Herve
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Aizawa Koji
Department of Physiology, Tokyo Medical University
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