AIZAWA Koji | Precision & Intelligence Laboratory, Tokyo Institute of Technology
スポンサーリンク
概要
関連著者
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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ICHIKI Tatsuya
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ichiki Tatsuya
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Tokumitsu E
Tokyo Inst. Technol. Yokohama Jpn
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Tokumitsu E
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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Park Byung-eun
Department Of Electrical And Computer Engineering University Of Seoul
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Takahashi Kazuhiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Aizawa Koji
Department of Physiology, Tokyo Medical University
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Aizawa Koji
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259-R2-19 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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ISHIWARA Hiroshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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PARK Byung-Eun
Department of Electrical and Computer Engineering, University of Seoul
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ISHIWARA Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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TOKUMITSU Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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ISHIWARA Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Ishiwara Hiroshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc
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Moriwaki Masashi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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TAKAHASHI Kazuhiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Aizawa Koji
Department Of Information And Communication Engineering Kanazawa Institute Of Technology
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Aizawa Koji
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Aizawa Koji
Precision And Interlligence Laboratory Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Aizawa Koji
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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TOKUMITS Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Okamoto Tomoyuki
Precision and Intelligence Laboratory, Tokyo Institute of Technology,
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Okamoto Tomoyuki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Aizawa Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259-R2-19 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Tokumitsu Eisuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology,
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Park Byung-Eun
Department of Electrical and Computer Engineering, University of Seoul, 90 Jeonnong-dong, Dongdaemoon-gu, Seoul 130-743, Korea
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Ishiwara Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-9 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Ohara Shuichiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-9 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
著作論文
- 30-day-long Data Retention in Ferroelectric-gate FETs with HfO_2 Buffer Layers
- Electrical Properties of Ferroelectric BaMgF_4 Films on Si Substrates ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Correlation between Ferroelectricity and Grain Structures of Face-to-Face Annealed Strontium Bismuth Tantalate Thin Films
- Growth and Crystallinity of Ferroelectric BaMgF_4 Films on (111)-Oriented Pt Films
- Ferroelectric Properties of BaMgF4 Films Grown on Si(100), (111), and Pt(111)/SiO2/Si(100) Structures
- Ferroelectric Properties of BaMgF_4 Films Grown on Si(100), (111), and Pt(111)/SiO_2/Si(100) Structures
- Praseodymium-Substituted Strontium Bismuth Tantalate Films with Saturated Remanent Polarization at 1 V
- Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2 Buffer Layers
- Reduction of Pyrochlore Phase and Pronounced Improvement of Ferroelectric Properties in Ultrathin SrBi2Ta2O9 Films Derived from Bi-Rich Sol–Gel Solution
- Ferroelectric Properties of Pt/Pb5Ge3O11/Pt and Pt/Pb5Ge3O11/HfO2/Si Structures