Takahashi Kazuhiro | Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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概要
- TAKAHASHI Kazuhiroの詳細を見る
- 同名の論文著者
- Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technologyの論文著者
関連著者
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Ishiwara Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Takahashi Kazuhiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Aizawa Koji
Department Of Information And Communication Engineering Kanazawa Institute Of Technology
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Park Byung-eun
Department Of Electrical And Computer Engineering University Of Seoul
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PARK Byung-Eun
Department of Electrical and Computer Engineering, University of Seoul
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ISHIWARA Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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TAKAHASHI Kazuhiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Aizawa Koji
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Aizawa Koji
Department of Information and Communication Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
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Aizawa Koji
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259-R2-19 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Park Byung-Eun
Department of Electrical and Computer Engineering, University of Seoul, 90 Jeonnong-dong, Dongdaemoon-gu, Seoul 130-743, Korea
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Takahashi Kazuhiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
著作論文
- 30-day-long Data Retention in Ferroelectric-gate FETs with HfO_2 Buffer Layers
- Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2 Buffer Layers
- Optimum Ferroelectric Film Thickness in Metal–Ferroelectric–Insulator–Semiconductor Structures Composed of Pt, (Bi,La)4Ti3O12, HfO2, and Si