Park Byung-eun | Department Of Electrical And Computer Engineering University Of Seoul
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概要
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関連著者
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Park Byung-eun
Department Of Electrical And Computer Engineering University Of Seoul
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PARK Byung-Eun
Department of Electrical and Computer Engineering, University of Seoul
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Ishiwara Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Takahashi Kazuhiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Choi Yun-soo
Department Of Geo-informatics University Of Seoul
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Lee Gwang-Geun
Department of Electrical and Computer Engineering, University of Seoul
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Han Hui-Seong
Department of Electrical and Computer Engineering, University of Seoul
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Jeong Shin-Woo
Department of Electrical and Computer Engineering, University of Seoul
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Han Dae-Hee
Department of Electrical and Computer Engineering, University of Seoul
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ISHIWARA Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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TAKAHASHI Kazuhiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Aizawa Koji
Department Of Information And Communication Engineering Kanazawa Institute Of Technology
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Aizawa Koji
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Choi Yun-Soo
Department of Geo-informatics, University of Seoul
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Aizawa Koji
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259-R2-19 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Park Byung-Eun
Department of Electrical and Computer Engineering, University of Seoul, 90 Jeonnong-dong, Dongdaemun-gu, Seoul 130-743, Korea
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Yoon Joo-Won
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Park Byung-Eun
Department of Electrical and Computer Engineering, University of Seoul, 90 Jeonnong-dong, Dongdaemoon-gu, Seoul 130-743, Korea
著作論文
- Electrical properties of metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using the polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE))/ZrO2/Si structure
- Fabrication and characterization of organic field effect transistors with poly(3-hexylthiophene) thin films
- 30-day-long Data Retention in Ferroelectric-gate FETs with HfO_2 Buffer Layers
- Comparative Study on Metal–Ferroelectric–Insulator–Semiconductor Diodes Composed of Poly(vinyliden fluoride-trifluoroethylene) and Poly(methyl metacrylate)-Blended Poly(vinyliden fluoride-trifluoroethylene)
- Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2 Buffer Layers