Electrical properties of metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using the polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE))/ZrO2/Si structure

スポンサーリンク

概要

• 論文の詳細を見る

• In this study, we fabricated the n-channel metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using an Au/polyvinylidene fluoride-trifluoroethylene P(VDF-TrFE)/ZrO2/Si(100) structures. The ZrO2 thin film had the equivalent oxide thickness (EOT) value of around 9 nm. And the P(VDF-TrFE) film on a ZrO2/Si structure showed good ferroelectric property with memory window width of 2.5 V for a bias voltage sweeping of ±7 V. The leakage current density of this MFIS structure showed very excellent insulation property with about 9 × 10−8 A/cm2 at 5 V. Based on these results, we fabricated and investigated MFIS-FETs with ferroelectric polymer P(VDF-TrFE) film and ZrO2 buffer layer. The memory window width and on/off ratio of the MFIS-FET was about 4.5 V and 103, respectively. These results predicted that the P(VDF-TrFE) thin film would be useful for the realization of 1-transistor type ferroelectric memory.

著者

• Choi Yun-soo

  Department Of Geo-informatics University Of Seoul

• Lee Gwang-Geun

  Department of Electrical and Computer Engineering, University of Seoul

• Han Hui-Seong

  Department of Electrical and Computer Engineering, University of Seoul

• PARK Byung-Eun

  Department of Electrical and Computer Engineering, University of Seoul

• Park Byung-eun

  Department Of Electrical And Computer Engineering University Of Seoul

• Choi Yun-Soo

  Department of Geo-informatics, University of Seoul

関連論文

• Electrical properties of metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using the polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE))/ZrO2/Si structure
• (Bi,La)_4Ti_3O_ as a ferroelectric layer and SrTa_2O_6 as a buffer layer for metal-ferroelectric-metal-insulator-semiconductor field-effect transistor
• Fabrication and characterization of organic field effect transistors with poly(3-hexylthiophene) thin films
• 30-day-long Data Retention in Ferroelectric-gate FETs with HfO_2 Buffer Layers
• Comparative Study on Metal–Ferroelectric–Insulator–Semiconductor Diodes Composed of Poly(vinyliden fluoride-trifluoroethylene) and Poly(methyl metacrylate)-Blended Poly(vinyliden fluoride-trifluoroethylene)
• Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2 Buffer Layers

スポンサーリンク