30-day-long Data Retention in Ferroelectric-gate FETs with HfO_2 Buffer Layers
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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PARK Byung-Eun
Department of Electrical and Computer Engineering, University of Seoul
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ISHIWARA Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Ishiwara Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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TAKAHASHI Kazuhiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Aizawa Koji
Department Of Information And Communication Engineering Kanazawa Institute Of Technology
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Aizawa Koji
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Park Byung-eun
Department Of Electrical And Computer Engineering University Of Seoul
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Takahashi Kazuhiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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