High Fatigue Endurance and Large Remanent Polarization in Pt/SrRuO<sub>3</sub>/BiFe<sub>0.95</sub>Mn<sub>0.05</sub>O<sub>3</sub>/SrRuO<sub>3</sub>/Pt Ferroelectric Capacitors Formed on SiO<sub>2</sub>-Coated Si Substrates
スポンサーリンク
概要
- 論文の詳細を見る
It has been demonstrated that oxide top electrodes are effective for improving the ferroelectric properties of 5 at. % Mn-substituted BiFeO<sub>3</sub> (BFMO) capacitors. The BFMO film was deposited on a SrRuO<sub>3</sub>(SRO)/Pt bottom electrode using radio-frequency sputtering. Then, Pt/SRO top electrodes were formed by a lift-off method, in which SRO and Pt films were deposited on a patterned photoresist at room temperature by RF sputtering and vacuum evaporation, respectively. In ferroelectric capacitors with an approximately 150-nm-thick BFMO film, remanent polarization, coercive voltage, and fatigue endurance were as good as 73 μC/cm2, 3.2 V, and $1.1\times 10^{8}$ cycles, respectively.
- 2011-08-25
著者
-
Ishiwara Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
-
Funakubo Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
-
Kim Jeong
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
-
Kim Jeong
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8503, Japan
-
Funakubo Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8503, Japan
-
Ishiwara Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8503, Japan
関連論文
- Fabrication and Characterization of 1k-bit 1T2C-Type Ferroelectric Memory Cell Array
- Simultaneous Observation of Ferroelectric Domain Patterns by Scanning Nonlinear Dielectric Microscope and Surface Morphology by Atomic Force Microscope
- Preparation of SrBi_2Ta_2O_9 Thin Films by Liquid-Delivery Metalorganic Chemical Vapor Deposition using a Double Alcoholate Source
- 30-day-long Data Retention in Ferroelectric-gate FETs with HfO_2 Buffer Layers
- Comparison of ferroelectric and insulating properties of Mn-doped BiFeO3 films formed on Pt, SrRuO3/Pt, and LaNiO3/Pt bottom electrodes by radio-frequency sputtering
- Cr-Doping Effects to Electrical Properties of BiFeO_3 Thin Films Formed by Chemical Solution Deposition
- Novel Optical Method for Widening Process Window of Phase-Modulated Excimer Laser Crystallization
- Fabrication and Electrical Characteristics of Metal–Ferroelectric–Semiconductor Field Effect Transistor Based on Poly(vinylidene fluoride)
- High Fatigue Endurance and Large Remanent Polarization in Pt/SrRuO3/BiFe0.95Mn0.05O3/SrRuO3/Pt Ferroelectric Capacitors Formed on SiO2-Coated Si Substrates
- High fatigue endurance and large remanent polarization in Pt/SrRuO3/BiFe0.95Mn0.05O3/SrRuO3/Pt ferroelectric capacitors formed on SiO2-coated Si substrates
- Organic Ferroelectric Diodes with Long Retention Characteristics Suitable for Non-Volatile Memory Applications
- Reduced Leakage Current in BiFeO_3 Thin Films on Si Substrates Formed by a Chemical Solution Method
- Effect of Deposition Time on Film Thickness and Their Properties for Hydrothermally-Grown Epitaxial KNbO3 Thick Films
- Improvement in Ferroelectric Fatigue Endurance of Poly(methyl metacrylate)-Blended Poly(vinylidene fluoride–trifluoroethylene)
- Comparative Study on Metal–Ferroelectric–Insulator–Semiconductor Diodes Composed of Poly(vinyliden fluoride-trifluoroethylene) and Poly(methyl metacrylate)-Blended Poly(vinyliden fluoride-trifluoroethylene)
- High Fatigue Endurance and Large Remanent Polarization in Pt/SrRuO_3/BiFe_Mn_O_3/SrRuO_3/Pt Ferroelectric Capacitors Formed on SiO_2-Coated Si Substrates
- Ferroelectric Properties of BaZrO3 Doped Sr0.8Bi2.2Ta2O9 Thin Films
- Comparative Studies on Ferroelectric Properties of Mn-Substituted BiFeO3 Thin Films Deposited on Ir and Pt Electrodes
- Low-Voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride--trifluoroethylene)
- Low-Temperature Preparation of (111)-oriented Pb(Zr,Ti)O3 Films Using Lattice-Matched (111)SrRuO3/Pt Bottom Electrode by Metal–Organic Chemical Vapor Deposition
- Large Remanent Polarization in Sm-Substituted BiFeO3 Thin Film Formed by Chemical Solution Deposition
- Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition
- Ferroelectric Properties of Cr-Doped BiFeO3 Films Crystallized below 500 °C
- Thickness Dependences of Polarization Characteristics in Mn-Substituted BiFeO3 Films on Pt Electrodes
- Positron Annihilation Study on Defects in HfSiON Films Deposited by Electron-Beam Evaporation
- Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2 Buffer Layers
- Optimum Ferroelectric Film Thickness in Metal–Ferroelectric–Insulator–Semiconductor Structures Composed of Pt, (Bi,La)4Ti3O12, HfO2, and Si
- Study on Stability of Pentacene-Based Metal–Oxide–Semiconductor Diodes in Air Using Capacitance–Voltage Characteristics
- Dependence of Ferroelectric Properties on Thickness of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition
- Doping Effect of Rare-Earth Ions on Electrical Properties of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition
- Characteristics of Undoped and Mn-Doped BiFeO3 Films Formed on Pt and SrRuO3/Pt Electrodes by Radio-Frequency Sputtering
- Reduction of Pyrochlore Phase and Pronounced Improvement of Ferroelectric Properties in Ultrathin SrBi2Ta2O9 Films Derived from Bi-Rich Sol–Gel Solution
- Ferroelectric Properties of Pt/Pb5Ge3O11/Pt and Pt/Pb5Ge3O11/HfO2/Si Structures
- Cr-Doping Effects to Electrical Properties of BiFeO3 Thin Films Formed by Chemical Solution Deposition
- Simultaneous Observation of Ferroelectric Domain Patterns by Scanning Nonlinear Dielectric Microscope and Surface Morphology by Atomic Force Microscope
- Comparison of Ferroelectric and Insulating Properties of Mn-Doped BiFeO3 Films Formed on Pt, SrRuO3/Pt, and LaNiO3/Pt Bottom Electrodes by Radio-Frequency Sputtering