PREFACE
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Ishiwara Hiroshi
Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
関連論文
- Ferroelectric Characteristics Control of (Bi,La)_4Ti_3O_ and SrBi_2Ta_2O_9 Films by Addition of Silicates and Germanates
- Multi-bit Programming for 1T-FeRAM by Local Polarization Method
- Effect of High-Pressure Oxygen Annealing on Bi_2SiO_5-Added Ferroelectric Thin Films : Electrical Properties of Condensed Matter
- Improvement of Ferroelectric Properties in RF-Magnetron-Sputtered SrBi2Ta2O9 Thin Films by Addition of Si Atoms
- Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer
- Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator
- PREFACE
- Fabrication process of pentacene-based vertical OFETs with HfO gate insulator (シリコン材料・デバイス)
- Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
- Ferroelectric Characteristics Control of (Bi,La)4Ti3O12 and SrBi2Ta2O9 Films by Addition of Silicates and Germanates
- Fabrication process of pentacene-based vertical OFETs with HfO_2 gate insulator