Fabrication process of pentacene-based vertical OFETs with HfO gate insulator (シリコン材料・デバイス)

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概要

• 論文の詳細を見る
• 2012-10-25

著者

• OHMI Shun-ichiro

  Tokyo Institute of Technology

• Ohmi Shun‐ichiro

  Tokyo Inst. Technol. Yokohama Jpn

• Ishiwara Hiroshi

  Tokyo Institute Of Technology

• Liao Min

  Department Of Electronics And Applied Physics Tokyo Institute Of Technology

• Ishiwara Hiroshi

  Konkuk Univ.

関連論文

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• Structural Characterization and Cytolytic Activity of a Potent Antimicrobial Motif in Longicin, a Defensin-Like Peptide in the Tick Haemaphysalis longicornis
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• Modulation of PtSi Work Function by Alloying with Low Work Function Metal
• Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer
• Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator
• Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2))
• PREFACE
• Fabrication process of pentacene-based vertical OFETs with HfO gate insulator (シリコン材料・デバイス)
• Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors
• Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
• Flattening Process of Si Surface below 1000°C Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation
• Fabrication process of pentacene-based vertical OFETs with HfO_2 gate insulator

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