Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2))
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概要
著者
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Ohmi Shunichiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Liao Min
Department Of Electronics And Applied Physics Tokyo Institute Of Technology
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- Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2))
- Fabrication process of pentacene-based vertical OFETs with HfO gate insulator (シリコン材料・デバイス)
- Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors
- Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
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