Fabrication process of pentacene-based vertical OFETs with HfO_2 gate insulator
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概要
- 論文の詳細を見る
The fabrication process of pentacene-based vertical OFETs with HfO_2 gate insulators was investigated for the first time. It was found that polystyrene spheres scattered on SiO_2 gate insulators by spin-coating method have large aggregated clusters. However, the size of the aggregated clusters is greatly reduced by using immersion method. Notably, polystyrene spheres scattered on the HfO_2 gate insulators by immersion method show improved distribution uniformity. Furthermore, the lift-off process for the Au film was performed utilizing the polystyrene spheres.
- 2012-10-18
著者
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OHMI Shun-ichiro
Tokyo Institute of Technology
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Ohmi Shun-ichiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Ishiwara Hiroshi
Tokyo Institute Of Technology
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Liao Min
Department Of Electronics And Applied Physics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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ISHIWARA Hiroshi
Department of Physics, Division of Quantum Phases and Devices, Konkuk University
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- PREFACE
- Effect of an In-situ Process on Electrical Properties of n-Type Pentacene-Based Metal-Oxide-Semiconductor Diodes with Yb Donor Layer
- Fabrication process of pentacene-based vertical OFETs with HfO gate insulator (シリコン材料・デバイス)
- Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors
- Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
- Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO
- HfOxNy Thin-Film Formation on Three-Dimensional Si Structure Utilizing Electron Cyclotron Resonance Sputtering
- Flattening Process of Si Surface below 1000°C Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation
- Fabrication process of pentacene-based vertical OFETs with HfO_2 gate insulator