Modulation of PtSi work function by alloying with low work function metal(Session 7A : Gate Oxides)
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概要
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In order to reduce PtSi Schottky barrier height (SBH) for electron, we investigated modulation of PtSi work function by alloying with low work function metal, such as Hf (3.9 eV). Pt (10-20 nm)/Hf (0-10 nm)/n-Si(100) stacked structures were in-situ deposited at room temperature by RF magnetron sputtering method. In case of Pt_xHf_<1-x>Si formed at 400℃/60 min annealing in N_2, SBH for electron was reduced from 0.85 eV to 0.53 eV with Hf thickness. It was found that work function of PtSi can be modulated by controlling the thickness of Hf film. In addition, for modulation of PtSi work function, we also compared it to Yb, which has a lower work function (2.7 eV).
- 2010-06-23
著者
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OHMI Shun-ichiro
Tokyo Institute of Technology
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Gao Jun
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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Ishikawa Jumpei
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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Ohmi Shun-ichiro
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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Ishikawa Jumpei
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Ohmi Shun-ichiro
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Gao Jun
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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