Effect of ultra-thin Yb layer on n-type characteristics of pentacene based MOS diodes (シリコン材料・デバイス)
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概要
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In order to obtain n-type characteristics of pentacene, we have fabricated pentacene based metal-oxide-semiconductor (MOS) diodes with 1nm-thick Yb layer between pentacene and SiO_2 gate insulator. The effect of Yb thickness and the deposition temperature of pentacene for electrical properties of the MOS diodes were investigated. It is found that the pentacene based MOS diodes with 1nm-thick Yb layer fabricated at 30℃ showed excellent n-type capacitance-voltage (C-V) characteristics.
- 2010-10-14
著者
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Ohmi Shun-ichiro
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Ishiwara Hiroshi
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Song Young-uk
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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Ohimi Shun-ichiro
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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Song Young-uk
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Ohimi Shun-ichiro
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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