Investigation of characteristics of pentacene-based MOSFETs structures (シリコン材料・デバイス)

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概要

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• In order to realize organic devices with low operation voltage, we have fabricated thin pentacene-based metal-oxide-semiconductor (MOS) diodes and field-effect-transistors (FETs) with very thin SiO_2 gate dielectric (3-10nm). The 12nm-thick pentacene showed excellent capacitance-voltage (C-V) characteristics with small hysteresis and high carrier concentration, such as 2×10^<18>cm^<-3>. High mobility with low voltage, such as 0.3cm^2/V-s was also obtained.

• 2009-10-22

著者

• Ohmi Shun-ichiro

  Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin

• Ishiwara Hiroshi

  Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin

• Song Young-uk

  Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin

• Song Y-U

  Dept. of Electronics and Applied Physics, Tokyo Institute of Technology

関連論文

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• Modulation of PtSi work function by alloying with low work function metal(Session 7A : Gate Oxides)
• Work function modulation of PtSi by alloying with Yb
• Effect of ultra-thin Yb layer on n-type characteristics of pentacene based MOS diodes (シリコン材料・デバイス)
• Modulation of PtSi Work Function by Alloying with Low Work Function Metal
• Effect of Si surface roughness on electrical characteristics of HfON gate insulator formed by ECR plasma sputtering
• Investigation of characteristics of pentacene-based MOSFETs structures (シリコン材料・デバイス)
• Contact resistivity reduction for PtSi/Si(100) by dopant segregation process

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