A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels(Novel MOSFET Structures,<Special Section>Fundamentals and Applications of Advanced Semiconductor Devices)
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概要
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Twin-Channel (TC)-MOSFET with twin omega-gate (Ω-gate) Si channels and its fabrication process were proposed. The twin Si channels are able to be fabricated by self-aligned process utilizing wet etching of SiN and silicon-on-insulator (SOI) wafers. Three-dimensional (3-D) device simulation was performed to optimize gate structure for TC-MOSFET with 10nm×10nm (T_<Si>×W_G) channels with the gate length of 30nm, and it was found that TC-MOSFET with right-angled Ω-gate in case the L_<under> was 3nm showed excellent device characteristics similar to the gate-all-around (GAA) devices corresponding to the gate structure as L_<under>=5nm. Fabrication process of twin Si channels was also investigated experimentally, and approximately 40nm×40nm twin Si channels were successfully fabricated on SOI by the proposed fabrication process.
- 社団法人電子情報通信学会の論文
- 2007-05-01
著者
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OHMI Shun-ichiro
Tokyo Institute of Technology
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Sakai Tetsushi
Tokyo Institute Of Technology
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Sakai Tetsushi
Tokyo Inst. Of Technol. Yokohama‐shi Jpn
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