Sakai Tetsushi | Tokyo Inst. Of Technol. Yokohama‐shi Jpn

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概要

• SAKAI Tetsushiの詳細を見る
• 同名の論文著者
• Tokyo Inst. Of Technol. Yokohama‐shi Jpnの論文著者

関連著者

• OHMI Shun-ichiro

  Tokyo Institute of Technology

• Sakai Tetsushi

  Tokyo Inst. Of Technol. Yokohama‐shi Jpn

• MUROTA Junichi

  Research Institute of Electrical Communication, Tohoku University

• Morita Shinya

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• YAMAZAKI Takashi

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• OHMI Shunichiro

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• OHRI Hiroyuki

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• SAKURABA Masao

  Research Institute for Electrical Communications, Tohoku University

• OMI Hiroo

  NTT Basic Research Laboratories, NTT Corporation

• SAKAI Tetsushi

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• Omi Hiroo

  Ntt Basic Research Laboratories

• Ohri Hiroyuki

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Sakai Tetsushi

  Tokyo Institute Of Technology

• Sakai Tetsushi

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Ohmi Shun‐ichiro

  Tokyo Inst. Technol. Yokohama Jpn

• Ohmi Shunichiro

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Sakuraba Masao

  Research Institute For Electrical Communications Tohoku University

• Murota Junichi

  Research Institute For Electrical Communications Tohoku University

• Omi Hiroo

  Ntt Basic Research Laboratories Ntt Corporation

• Yamazaki Takashi

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

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著作論文

• Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
• A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels(Novel MOSFET Structures,Fundamentals and Applications of Advanced Semiconductor Devices)

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