Kijima Takeshi | Research And Development For Future Electron Devices
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概要
関連著者
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Kijima Takeshi
Research And Development For Future Electron Devices
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KAWASHIMA Yoshihito
Tokyo Institute of Technology
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Ishiwara Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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Idemoto Yasushi
Science University Of Tokyo
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Kijima T
Research And Development For Future Electron Devices:tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Kawashima Yoshihito
Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
著作論文
- Ferroelectric Characteristics Control of (Bi,La)_4Ti_3O_ and SrBi_2Ta_2O_9 Films by Addition of Silicates and Germanates
- Effect of High-Pressure Oxygen Annealing on Bi_2SiO_5-Added Ferroelectric Thin Films : Electrical Properties of Condensed Matter
- Ferroelectric Characteristics Control of (Bi,La)4Ti3O12 and SrBi2Ta2O9 Films by Addition of Silicates and Germanates