Kato Kazumi | National Industrial Research Institute Of Nagoya
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概要
関連著者
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Kato Kazumi
National Industrial Research Institute Of Nagoya
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KATO Kazumi
National Institute of Advanced Industrial Science and Technology (AIST)
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SUZUKI Kazuyuki
National Institute of Advanced Industrial Science and Technology
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Kato Kazumi
National Inst. Of Advanced Industrial Sci. And Technol. (aist)
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Masuda Yoshitake
National Inst. Of Advanced Industrial Sci. And Technol. (aist)
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MASUDA Yoshitake
National Institute of Advanced Industrial Science and Technology (AIST)
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MIKI Takeshi
National Institute of Advanced Industrial Science and Technology
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FU Desheng
National Institute of Advanced Industrial Science and Technology
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NISHIZAWA Kaori
National Institute of Advanced Industrial Science and Technology
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Kato Kazumi
National Institute Of Advanced Industrial Science And Technology
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NISHIZAWA KAORI
National Industrial Research Institute of Nagoya
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Suzuki K
Precision Equipment Company Nikon Corporation
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Kato K
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
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Suzuki K
Display Materials And Devices Laboratory Corporate Research And Development Center Toshiba Corporati
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Fu Desheng
Advanced Manufacturing Research Institute National Institute Of Advanced Industrial Science And Tech
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OHJI Tatsuki
National Industrial Research Institute of Nagoya
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Miki T
Multifunctional Material Science Department National Industrial Research Institute Of Nagoya
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Ohji Tatsuki
National Institute Of Advanced Industrial Science And Technology (aist)
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Miki T
Yamaguchi Univ. Ube Jpn
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Fu Deshung
Ceramic Research Division National Institute Of Advanced Industrial Science And Technology
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Hu Xiulan
National Institute Of Advanced Industrial Science And Technology (aist)
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Imai Hiroaki
Keio University
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Haneda Hajime
National Institute For Material Science
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Kuwabara Makoto
Kyushu Institute Of Technology
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Yasui Kyuichi
National Industrial Research Institute of Nagoya, AIST, Hirate-cho, Kita-ku, Nagoya 462-8510, Japan
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Tuziuti Toru
National Industrial Research Institute Of Nagoya
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Mimura Ken-ichi
National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
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Wada Satoshi
University of Yamanashi, Kofu 400-8511, Japan
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Kato Kazumi
National Institute of Advanced Industrial Science and Technology, 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
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Kato Kazumi
National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
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Dang Feng
National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
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鈴木 久男
静岡大学工学部物質工学科
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Fu Desheng
Research Institute Of Electronics Shizuoka University
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SUZUKI HISAO
Department of Material Science, Graduate School of Engineering, Shizuoka University
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NISHIZAWA Kaori
Frontier Collaborative Research Center; Tokyo Institute of Technology
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MINAKATA Makoto
Research Institute of Electronics, Shizuoka Universiry
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc
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TOWATA Atsuya
National Industrial Research Institute of Nagoya
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鈴木 久男
静岡大 創造科学技術大学院
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Hoko Hiromasa
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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Tamura T
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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YASUI Kyuichi
National Institute of Advanced Industrial Science and Technology (AIST)
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Tabuchi Yoshiaki
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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HASEGAWA Satoshi
Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering
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TAMURA Tetsuro
Silicon Technology Lab., FUJITSU LABORATORIES LTD.
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ARIMOTO Yoshihiro
System LSI Development Labs., FUJITSU LABORATORIES LTD.
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Minakata M
Research Institute Of Electronics Shizuoka Universiry
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Ishiwara Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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Suzuki Hisao
Department Of Electronic-mechanical Engineering Faculty Of Engineering Nagoya University
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Arimoto Y
System Lsi Development Labs. Fujitsu Laboratories Ltd.
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Minakata Makoto
Research Institute Of Electrical Communication Tohoku University
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Hasegawa Satoshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Okada Hiroyuki
Graduate School Of Science & Engineering University Of Toyama
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Naka Shigeki
Graduate School of Science and Engineering, University of Toyama, Toyama 930-8555, Japan
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Naka Shigeki
Graduate Scholl of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555, Japan
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Nishizawa Ryota
Graduate School of Science and Engineering, University of Toyama, Toyama 930-8555, Japan
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Dang Feng
National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
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Kato Kazumi
National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
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Suzuki Kazuyuki
National Institute of Advanced Industrial Science and Technology, 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
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Suzuki Kazuyuki
National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
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Suzuki Kazuyuki
National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
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Tanaka Kiyotaka
National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
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Okada Hiroyuki
Graduate Scholl of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555, Japan
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Nishizawa Kaori
National Institute of Advanced Industrial Science and Technology, 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
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Nishizawa Kaori
National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
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Guo Yiping
National Institute of Advanced Industrial Science and Technology, 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
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Wada Satoshi
Yamanashi University, 4-3-11 Takeda, Kofu 400-8511, Japan
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Suzuki Hisao
Departmennt of Materials Science, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan
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Miki Takeshi
National Institute of Advanced Industrial Science and Technology, 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
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Imai Hiroaki
Keio University, 4-1-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
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Imai Hiroaki
Keio University, Yokohama 223-8522, Japan
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Masuda Yoshitake
National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
著作論文
- Synthesis of highly conductive and transparent ZnO nanowhisker films using aqueous solution(Global Innovation in Advanced Ceramics)
- Control of crystal growth of ZnO nanowhiskers in aqueous solution and synthesis of transparent nanoarrays (特集 自然に学ぶプロセス)
- Low-temperature fabrication of semi-circular shaped ZnO nanowhiskers using an aqueous solution (特集 自然に学ぶプロセス)
- Chemical Approach Using Tailored Liquid Sources for Traditional and Novel Ferroelectric Thin Films
- Local Piezoelectric Response in Bismuth-Based Ferroelectric Thin Films Investigated by Scanning Force Microscopy : Electnical Properties of Condensed Malter
- Structure and Ferroelectric Properties of Alkoxy-Derived Ca_2Bi_4Ti_5O_ Thin Films on Pt(111)/TiO_x/SiO_2/Si(100)
- Investigation of Domain Switching and Retention in Oriented PbZr_Ti_O_3 Thin Film by Scanning Force Microscopy
- Comparison of Microstructure and Ferroelectric Properties of Alkoxy-Derived MBi_4Ti_4O_ (M: Ca or Sr) Thin Films
- Preparation of Layer-Structured CaBi_2Ta_2O_9 Ferroelectric Thin Films through a Triple Alkoxide Route
- Multi-bit Programming for 1T-FeRAM by Local Polarization Method
- Synthesis of nanocrystal assembled TiO_2 particles by boric acid free liquid phase crystal deposition(Global Innovation in Advanced Ceramics)
- Micropore size distribution in nanocrystal assembled TiO_2 particles(Global Innovation in Advanced Ceramics)
- Synthesis and phase transformation of TiO_2 nano-crystals in aqueous solutions(Aqueous Solution Science for Ceramic Processing II)
- Aqueous solution synthesis of anatase TiO2 particles (特集 自然に学ぶプロセス)
- Characterization of Dielectric Nanocubes Ordered Structures Fabricated by Solution Self-Assembly Process
- Two-Dimensional Patterning of Inorganic Particles in Resin Using Ultrasound-Induced Plate Vibration
- Effects of Sonication Conditions on Ultrasonic Dispersion of Inorganic Particles in Acrylic Resin
- Characteristics of BaTiO3 Particles Sonochemically Synthesized in Aqueous Solution
- Evolution of Ferroelectric Structure in SrBi_2Ta_2O_9 Thin Films Prepared Using Triple Alkoxides on Pt-Passivated Si
- Low-Temperature Processing Using Triple Alkoxides Precursors for Non-volatile Ferroelectric Memories
- Effects of Flat HfO2 Films Derived from Diethanolamine Solution on Structure and Properties of Metal/Ferroelectrics/Insulator/Semiconductor
- Organic Thin-Film Transistors with Tailored Liquid Sources of High-$\kappa$ HfO2 Using Excimer Laser Irradiation
- Fabrication and Characterization of Dielectric Nanocube Self-Assembled Structures
- Anisotropic Crystal Growth and Microstructure Observation of Single Phase SnO_2 Nano-sheet Assemblies
- Effects of Modified Precursor Solution on Microstructure of (Y,Yb)MnO3/HfO2/Si
- Ferroelectric Property of Alkoxy-Derived YMnO3 Films Crystallized in Argon
- Downsizing of HfO2 Layer for Pt/(Y,Yb)MnO3/HfO2/Si Structure
- Preparation of (Y,Yb)MnO3/Y2O3/Si (MFIS) Structure by Chemical Solution Deposition Method
- Thickness Dependence of Electrical Properties of Highly (100)-Oriented BaTiO3 Thin Films Prepared by One-Step Chemical Solution Deposition
- Piezoelectric Properties of CaBi4Ti4O15 Ferroelectric Thin Films Investigated by Atomic Force Microscopy
- S22. Numerical simulations of aggregation of sonochemically synthesized BaTiO_3 nanocrystals(Oral Presentation)