Effects of Flat HfO2 Films Derived from Diethanolamine Solution on Structure and Properties of Metal/Ferroelectrics/Insulator/Semiconductor
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概要
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HfO2 films were prepared using precursor solutions with and without diethanolamine. The microstructure of HfO2 films changed with the presence of diethanolamine. This result is thought to be due to the difference in the progress of organic decomposition and the behavior of nucleation and grain growth. The microstructure of HfO2 films affected the crystallization and microstructure of Y0.5Yb0.5MnO3 films on these HfO2 films. The flatness of HfO2 and Y0.5Yb0.5MnO3 films was improved by the modification of HfO2 precursor solutions with diethanolamine.
- 2008-09-25
著者
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SUZUKI Kazuyuki
National Institute of Advanced Industrial Science and Technology
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Kato Kazumi
National Industrial Research Institute Of Nagoya
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Kato Kazumi
National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
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Tanaka Kiyotaka
National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
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