Preparation of (Y,Yb)MnO3/Y2O3/Si (MFIS) Structure by Chemical Solution Deposition Method
スポンサーリンク
概要
- 論文の詳細を見る
(Y,Yb)MnO3 films were prepared on Y2O3-buffered n-type Si(111) substrates using alkoxy-derived precursor solutions and rapid thermal annealing at 750°C in Ar. The (Y,Yb)MnO3 films crystallized to hexagonal phase and had high crystallinity and high degrees of $c$-axis orientation. The hexagonal (Y,Yb)MnO3 films consisted of uniform grains and had smooth surfaces. The electrical properties of the 200-nm-thick Y0.5Yb0.5MnO3 films crystallized on the Y2O3/Si(111) substrates at 750°C in Ar were investigated. The leakage current density of the Pt/Y0.5Yb0.5MnO3/Y2O3/Si capacitor was $1.0\times 10^{-8}$ A/cm2 at an applied voltage of 5 V. The counterclockwise capacitance-voltage ($C$-$V$) hysteresis induced by ferroelectric polarization switching was observed in the Pt/Y0.5Yb0.5MnO3/Y2O3/Si capacitor.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-09-15
著者
-
FU Desheng
National Institute of Advanced Industrial Science and Technology
-
NISHIZAWA Kaori
National Institute of Advanced Industrial Science and Technology
-
MIKI Takeshi
National Institute of Advanced Industrial Science and Technology
-
SUZUKI Kazuyuki
National Institute of Advanced Industrial Science and Technology
-
Kato Kazumi
National Industrial Research Institute Of Nagoya
-
Kato Kazumi
National Institute of Advanced Industrial Science and Technology, 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
-
Suzuki Kazuyuki
National Institute of Advanced Industrial Science and Technology, 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
-
NISHIZAWA KAORI
National Industrial Research Institute of Nagoya
-
Nishizawa Kaori
National Institute of Advanced Industrial Science and Technology, 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
-
Miki Takeshi
National Institute of Advanced Industrial Science and Technology, 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
関連論文
- Synthesis of highly conductive and transparent ZnO nanowhisker films using aqueous solution(Global Innovation in Advanced Ceramics)
- Control of crystal growth of ZnO nanowhiskers in aqueous solution and synthesis of transparent nanoarrays (特集 自然に学ぶプロセス)
- Low-temperature fabrication of semi-circular shaped ZnO nanowhiskers using an aqueous solution (特集 自然に学ぶプロセス)
- Preparation of (Y,Yb)Mn0_3/Y_20_3/Si (MFIS) Structure by Chemical Solution Deposition Method
- Piezoelectric Properties of CaBi_4Ti_40_ Ferroelectric Thin Films Investigated by Atomic Force Microscopy
- Ferroelectric Property of Alkoxy-Derived YMnO_3 Films Crystallized in Argon
- Chemical Approach Using Tailored Liquid Sources for Traditional and Novel Ferroelectric Thin Films
- Local Piezoelectric Response in Bismuth-Based Ferroelectric Thin Films Investigated by Scanning Force Microscopy : Electnical Properties of Condensed Malter
- Structure and Ferroelectric Properties of Alkoxy-Derived Ca_2Bi_4Ti_5O_ Thin Films on Pt(111)/TiO_x/SiO_2/Si(100)
- Investigation of Domain Switching and Retention in Oriented PbZr_Ti_O_3 Thin Film by Scanning Force Microscopy
- Growth and Adhesion of Osteoblast-Like Cells Derived from Neonatal Rat Calvaria on Calcium Phosphate Ceramics
- Preparation of Calcium-Strontium Apatite through Mechanochemical Method
- Comparison of Microstructure and Ferroelectric Properties of Alkoxy-Derived MBi_4Ti_4O_ (M: Ca or Sr) Thin Films
- Preparation of Layer-Structured CaBi_2Ta_2O_9 Ferroelectric Thin Films through a Triple Alkoxide Route
- Multi-bit Programming for 1T-FeRAM by Local Polarization Method
- Synthesis of nanocrystal assembled TiO_2 particles by boric acid free liquid phase crystal deposition(Global Innovation in Advanced Ceramics)
- Micropore size distribution in nanocrystal assembled TiO_2 particles(Global Innovation in Advanced Ceramics)
- Synthesis and phase transformation of TiO_2 nano-crystals in aqueous solutions(Aqueous Solution Science for Ceramic Processing II)
- Aqueous solution synthesis of anatase TiO2 particles (特集 自然に学ぶプロセス)
- Characterization of Dielectric Nanocubes Ordered Structures Fabricated by Solution Self-Assembly Process
- Two-Dimensional Patterning of Inorganic Particles in Resin Using Ultrasound-Induced Plate Vibration
- Effects of Sonication Conditions on Ultrasonic Dispersion of Inorganic Particles in Acrylic Resin
- Characteristics of BaTiO3 Particles Sonochemically Synthesized in Aqueous Solution
- Evolution of Ferroelectric Structure in SrBi_2Ta_2O_9 Thin Films Prepared Using Triple Alkoxides on Pt-Passivated Si
- Low-Temperature Processing Using Triple Alkoxides Precursors for Non-volatile Ferroelectric Memories
- Effects of Flat HfO2 Films Derived from Diethanolamine Solution on Structure and Properties of Metal/Ferroelectrics/Insulator/Semiconductor
- Organic Thin-Film Transistors with Tailored Liquid Sources of High-$\kappa$ HfO2 Using Excimer Laser Irradiation
- Fabrication and Characterization of Dielectric Nanocube Self-Assembled Structures
- Anisotropic Crystal Growth and Microstructure Observation of Single Phase SnO_2 Nano-sheet Assemblies
- Preparation of ferroelectric (Y, Yb)MnO_3 films by chemical solution process
- Effects of Modified Precursor Solution on Microstructure of (Y,Yb)MnO3/HfO2/Si
- Ferroelectric Property of Alkoxy-Derived YMnO3 Films Crystallized in Argon
- Downsizing of HfO2 Layer for Pt/(Y,Yb)MnO3/HfO2/Si Structure
- Preparation of (Y,Yb)MnO3/Y2O3/Si (MFIS) Structure by Chemical Solution Deposition Method
- Thickness Dependence of Electrical Properties of Highly (100)-Oriented BaTiO3 Thin Films Prepared by One-Step Chemical Solution Deposition
- Piezoelectric Properties of CaBi4Ti4O15 Ferroelectric Thin Films Investigated by Atomic Force Microscopy
- S22. Numerical simulations of aggregation of sonochemically synthesized BaTiO_3 nanocrystals(Oral Presentation)