Organic Thin-Film Transistors with Tailored Liquid Sources of High-$\kappa$ HfO2 Using Excimer Laser Irradiation
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概要
- 論文の詳細を見る
The characteristics of organic thin-film transistors (OTFTs) with tailored liquid sources of HfO2 as a high-$\kappa$ insulator were investigated using excimer laser irradiation. We have demonstrated that the OTFT characteristics were improved more by short wavelength light source irradiation than UV irradiation to cleave chemical bonds of organic residues in the alkoxy-derived HfO2 films. The field-effect mobilities and on--off ratios obtained for one shot of excimer laser irradiation were 0.18 cm2 V-1 s-1 and 750, respectively.
- 2011-01-25
著者
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SUZUKI Kazuyuki
National Institute of Advanced Industrial Science and Technology
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Kato Kazumi
National Industrial Research Institute Of Nagoya
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Okada Hiroyuki
Graduate School Of Science & Engineering University Of Toyama
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Naka Shigeki
Graduate School of Science and Engineering, University of Toyama, Toyama 930-8555, Japan
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Naka Shigeki
Graduate Scholl of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555, Japan
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Nishizawa Ryota
Graduate School of Science and Engineering, University of Toyama, Toyama 930-8555, Japan
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Suzuki Kazuyuki
National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
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Okada Hiroyuki
Graduate Scholl of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555, Japan
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