Optical Cavity Based on Porous Silicon Superlattice Technology
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概要
- 論文の詳細を見る
- 1996-02-01
著者
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KOSHIDA Nobuyoshi
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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KOYAMA Hideki
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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Koyama H
Univ. Tsukuba Ibaraki Jpn
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ARAKI Minoru
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
関連論文
- Precise Thermal Characterization of Confined Nanocrystalline Silicon by a 3ω Method
- Electroluminescence from Deuterium Terminated Porous Silicon
- Visible Electroluminescence from Porous Silicon Diodes with Immersed Conducting Polymer Contacts
- Optical Cavity Based on Porous Silicon Superlattice Technology
- Optical Cavity Based on Porous Silicon Superlattice Technology
- Cold Electron Emission from Electroluminescent Porous Silicon Diodes
- The Relatiornship between Photoconduction Effects and Luminescent Properties of Porous Silicon
- Evidence of Homogeneously Broadened Spectra in the Visible Photoluminescence of Porous Silicon
- Visible Photoluminescence of Porous Si and Its Related Optical Properties
- Radiative Transition with Visible Light in Electrochemical Anodized Polycrystalline Silicon
- Fabrication of Periodic Si Nanostructure by Controlled Anodization
- Significant Reduction of Phonon Scattering Potential in 1D Si Quantum Dot Array Interconnected with Thin Oxide Layers
- Optical Cavity Based on Porous Silicon Superlattice Technology