New III–V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy
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概要
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A new Bi-containing III–V semiconductor InGaAsBi alloy was firstly grown by molecular beam epitaxy (MBE). The high crystalline quality of the InGaAsBi epilayer with smooth interfaces was confirmed by X-ray diffraction measurements. Up to 2.5% Bi was incorporated in the film based on Rutherford back scattering (RBS) results. The RBS channeling spectra give clear evidence that the Bi atoms were substitutionally located in the InGaAs zinc-blende lattice sites.
- 2005-09-10
著者
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Oe Kunishige
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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CHAYAHARA Akiyoshi
AIST Kansai
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HORINO Yuji
AIST Kansai
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Chayahara Akiyoshi
AIST Kansai, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan
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Yoshimoto Masahiro
Cooperate Research Center, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Feng Gan
Venture Laboratory, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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