Characteristics of Semiconductor Alloy GaAs_<1-x>Bi_x
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-05-15
著者
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Oe Kunishige
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Oe Kunishige
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
関連論文
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- Low Temperature Dependence of Oscillation Wavelength in GaAs_Bi_x Laser by Photo-Pumping
- Deep-Hole Traps in p-Type GaAs1-xBix Grown by Molecular Beam Epitaxy
- High-Gain Optical Amplification of Europium-Aluminum (Eu^-Al)-Nanocluster-Doped Planar Polymer Waveguides
- New Semiconductor Alloy GaAs_Bi_x Grown by Metal Organic Vapor Phase Epitaxy
- High-Gain Optical Amplification of Europium–Aluminum (Eu3+–Al)-Nanocluster-Doped Planar Polymer Waveguides
- Characteristics of Semiconductor Alloy GaAs_Bi_x
- Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy
- New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
- High Hole Mobility in GaAsxBi[x] Alloys
- Growth of GaAs1-xBix/AlyGa1-yAs Multi-Quantum-Well Structures
- Near Infrared Light Amplification in Dye-Doped Polymer Waveguide
- New III–V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy
- Interface States in p-Type GaAs/GaAsxBi[x] Heterostructure (Special Issue : Applied Physics on Materials Research)
- Fiber-to-Fiber Optical Gain of Polymer-Based Amplifier with Self-Written Active Waveguide
- Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
- Electronic Structure of Ordered Ga0.5In0.5P/GaAs Heterointerface Studied by Raman-Scattering and Photoluminescence-Excitation Measurements
- Influence of Thermal Annealing Treatment on the Luminescence Properties of Dilute GaNAs–Bismide Alloy
- Temperature Dependence of GaAs1-xBix Band Gap Studied by Photoreflectance Spectroscopy
- Anisotropic Optical Transitions in [110]-Oriented Semiconductor Quantum Well Studied by Photoreflectance Spectroscopy
- Optical Amplification in Organic Dye-doped Polymeric Channel Waveguide under CW Optical Pumping