X-Ray Diffraction Study of ZnSe(111) Films Grown on GaAs(111)A Substrates by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
ZnSe(111) films grown on GaAs(111)A substrates were studied by X-ray diffraction measurement. The [111] axis of ZnSe epilayers was tilted toward the [100] direction when the films were grown on 5°- and 10°-misoriented substrates toward the [100] direction. However, such tilting was not observed in the epilayers grown on just-oriented substrates. The lattice spacing d111 of the epilayers was measured and the lattice deformation and relaxation were studied.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1997-03-15
著者
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Mori Tatsushi
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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Matsumura Nobuo
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Shimakawa Hiroyuki
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Maemura Koichiro
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Shimakawa Hiroyuki
Department of Electronics and Information Science, Faculty of Engineering and Design,
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Mori Tatsushi
Department of Electronics and Information Science, Faculty of Engineering and Design,
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Maemura Koichiro
Department of Electronics and Information Science, Faculty of Engineering and Design,
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