Hot Electron Conduction in a-Si:H/a-Si_<0.2>C_<0.8>:H Super Structure
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概要
- 論文の詳細を見る
A-Si:H/a-Si_<0.2>C_<0.8>:H super structures were fabricated by glow discharge method. The barrier layer using a-Si_<0.2>C_<0.8>:H was typically 40 Å thick. The thickness of the well layer consisting of doped n-type a-Si:H was changed from 17 Å to 100 Å. The construction of super structures was confirmed by X-ray diffraction. Generation of hot electrons using a newly devised super structure was verified experimentally for the first time.
- 社団法人応用物理学会の論文
- 1986-11-20
著者
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Matsunami H
Kyoto Univ. Kyoto Jpn
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Fuyuki Takashi
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Yoshimoto M
Materials And Structures Laboratory Tokyo Institute Of Technology
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Fuyuki T
Nara Inst. Sci. And Technol. Nara Jpn
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Fuyuki Takashi
Department Of Eectrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Fujii Tadashi
the Graduate School of Materials Science, Nara Institute of Science and Technology
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