Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature
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概要
- 論文の詳細を見る
Three types of InGaN multiple quantum-well light-emitting diodes (LEDs) were subjected to electroluminescent and electrical characterization at low temperatures and results were compared. Characterized samples included (0001) $c$-plane InGaN LEDs, ($11\bar{2}0$) $a$-plane InGaN LEDs, and AlInGaP LEDs. While electroluminescence from the ($11\bar{2}0$) InGaN LEDs and AlInGaP LEDs extinguished and became highly electrically resistive at low temperature, the (0001) InGaN LEDs emitted light down to 7 K. This result suggested the continued presence of electrical carriers in the (0001) InGaN LEDs at low temperatures. A carrier-generation mechanism is proposed by examining the energy band diagram with polarization-induced internal electric fields taken into account. Polarization fields in the (0001) InGaN LEDs give rise to local field emission, hole-trapping potential, and interface states, which assist hole injection. It is believed that (0001) InGaN LED operation was possible at low temperatures because of these effects.
- 2006-10-15
著者
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DENBAARS Steven
Materials Department and Electrical Engineering Department, University of California
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Masui Hisashi
Materials Department College Of Engineering University Of California
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CHAKRABORTY Arpan
Electrical and Computer Engineering and Materials Departments, University of California
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Schmidt Mathew
Materials Department And Erato Jst Ucsb Group University Of California
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Nakamura Shuji
Materials Department University Of Cahfornia
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Chakraborty Arpan
Electrical and Computer Engineering Department, College of Engineering, University of California, Santa Barbara, CA 93106-9560, U.S.A.
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DenBaars Steven
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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