Characterization of $a$-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• The structural and optical properties of a 10-period (10.7 nm GaN)/(10.1 nm Al0.25Ga0.75N) multiple quantum well structure grown on an $a$-plane GaN template layer were investigated. Despite high threading dislocation density (${\sim}3\times 10^{10}$ cm-2) and surface undulations, abrupt quantum well interfaces produced well-defined satellite peaks out to the second order in a symmetric high-resolution X-ray diffraction scan. Thorough analysis of X-ray diffraction measurements (kinematical analysis and dynamic simulations) provided accurate measurements of the quantum well dimensions and barrier composition. Room temperature photoluminescence emission from the structure exhibits quantum confinement consistent with quantum wells free of polarization-induced electric fields.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-03-01

著者

• Craven Michael

  Materials Department University Of California

• Waltereit Patrick

  Materials Department University Of California

• Wu Feng

  Materials Department and NICP ERATO/JST Group, University of California, Santa Barbara, CA 93106, U.S.A.

• Speck James

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• DenBaars Steven

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Waltereit Patrick

  Materials Department, University of California, Santa Barbara, California 93106-5050, U. S. A.

• Wu Feng

  Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Wu Feng

  Materials Department, University of California, Santa Barbara, California 93106-5050, U. S. A.

• Speck James

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

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