Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors

スポンサーリンク

概要

• 論文の詳細を見る

• In this paper, we report for the first time an estimation of hot electron relaxation time in GaN using electrical measurements. Hot electron transistors (HETs) with GaN as the base layer and different base-emitter barrier-height configurations and base thicknesses were fabricated. Common-base measurements were performed to extract the differential transfer ratio, and an exponential decay of the transfer ratio with increasing base thickness was observed. A hot electron mean free path was extracted from the corresponding exponential fitting and a relaxation time was computed, which, for low energy injection, matched well with theoretically predicted relaxation times based on longitudinal optical (LO) phonon scattering.

• 2013-03-25

著者

• Mishra Umesh

  Ece Department Ucsb

• Speck James

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Mishra Umesh

  ECE Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Raman Ajay

  ECE Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Dasgupta Sansaptak

  ECE Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Lu Jing

  ECE Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Hurni Christophe

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Gupta Geetak

  ECE Department, University of California, Santa Barbara, CA 93106, U.S.A.

関連論文

• High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
• Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
• Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
• Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
• High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
• Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC
• Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Teansport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy : Semiconductors
• Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
• Effect of Substrate Miscut on the Direct Growth of Semipolar (1011) GaN on (100) MgAl_2O_4 by Metalorganic Chemical Vapor Deposition
• Characterization of a-Plane GaN/(Al, Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition
• Electronic Applications of GaN Devices
• Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy
• Enhancement-Mode N-Polar GaN Metal--Insulator--Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz
• Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors
• High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2
• Enhancing the Light Extraction Efficiency of Blue Semipolar $(10\bar{1}\bar{1})$ Nitride-Based Light Emitting Diodes through Surface Patterning
• Substrate Reactivity and "Controlled Contamination" in Metalorganic Chemical Vapor Deposition of GaN on Sapphire
• Propagation of Spontaneous Emission in Birefringent $m$-Axis Oriented Semipolar ($11\bar{2}2$) (Al,In,Ga)N Waveguide Structures
• Basal Plane Stacking-Fault Related Anisotropy in X-ray Rocking Curve Widths of $m$-Plane GaN
• Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
• Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient
• Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (20\bar{2}\bar{1}) Blue Light-Emitting Diodes
• Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy
• Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers
• Demonstration of Nonpolar $m$-Plane InGaN/GaN Laser Diodes
• High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar $m$-plane Bulk GaN Substrate
• Impact of Substrate Miscut on the Characteristic of $m$-plane InGaN/GaN Light Emitting Diodes
• Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (2021) Blue Light-Emitting Diodes
• Demonstration of Distributed Bragg Reflectors for Deep Ultraviolet Applications
• Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk $m$-Plane GaN Substrate
• Nonpolar $m$-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
• Growth of Bulk GaN Crystals by the Basic Ammonothermal Method
• Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
• Photoelectrochemical Properties of Nonpolar and Semipolar GaN
• Low Ohmic Contact Resistance $m$-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
• Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown $a$-Plane GaN
• Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III--Nitride Light-Emitting Diodes
• Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors
• Stability of $(1\bar{1}00)$ $m$-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition
• Green Semipolar (20\bar{2}\bar{1}) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
• Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells
• Characterization of $a$-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition
• Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy
• Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
• Semipolar $(10\bar{1}\bar{1})$ InGaN/GaN Laser Diodes on Bulk GaN Substrates
• Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
• Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC
• Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors
• Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors

もっと見る 閉じる

スポンサーリンク