Semipolar $(10\bar{1}\bar{1})$ InGaN/GaN Laser Diodes on Bulk GaN Substrates
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概要
- 論文の詳細を見る
The first semipolar nitride laser diodes (LDs) have been realized on low extended defect density semipolar $(10\bar{1}\bar{1})$ GaN bulk substrates. The LDs were grown by conventional metal organic chemical vapor deposition (MOCVD). Broad area lasers were fabricated and tested under pulsed conditions. Lasing was observed at a duty cycle of 0.025% with a threshold current density ($J_{\text{th}}$) of 18 kA/cm2. Stimulated emission was observed at 405.9 nm with a full width at half maximum (FWHM) of less than 0.3 nm.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2007-05-25
著者
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Nakamura Shuji
Materials Department University Of Cahfornia
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Saito Makoto
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Zhong Hong
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Tyagi Anurag
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Fujito Kenji
Optoelectronic Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan
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DenBaars Steven
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Chung Roy
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Feezell Daniel
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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