30-mW-Class High-Power and High-Efficiency Blue Semipolar ($10\bar{1}\bar{1}$) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
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概要
- 論文の詳細を見る
The first 30-mW-class semipolar blue light-emitting diode (LED) on a free-standing ($10\bar{1}\bar{1}$) GaN substrate has been demonstrated by using microscale periodic backside structures. The light extraction efficiency and corresponding output power were greatly enhanced, by up to 2.8-fold (bare chip) compare with conventional devices. At a driving current of 20 mA, the LED showed an output power of 31.1 mW and an external quantum efficiency of 54.7%. Semipolar GaN LED technology is now comparable to commercial $c$-plane blue LED technology, not only in terms of internal material properties but also in terms of chip processing techniques.
- 2010-10-25
著者
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Nakamura Shuji
Electrical And Computer Engineering Department University Of California
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Sonoda Junichi
Materials Department University Of California
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Zhao Yuji
Electrical And Computer Engineering Department University Of California
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Ohta Hiroaki
Materials Department University Of California
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Pan Chih-chien
Materials Department University Of California
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Koslow Ingrid
Materials Department University Of California
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Brinkley Stuart
Electrical And Computer Engineering Department University Of California
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Fujito Kenji
Optoelectronic Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan
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DenBaars Steven
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Pan Chih-Chien
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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