Growth of Bulk GaN Crystals by the Basic Ammonothermal Method
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概要
- 論文の詳細を見る
A remarkable progress was made in GaN wafer fabrication via the basic ammonothermal method. Bulk GaN crystals were grown on GaN platelets in supercritical ammonia at 575 °C and 220 MPa with sodium amide. The grown crystals showed three-dimensional polyhedron shape in size of more than 5 mm. Clear crystallographic facets of N-face and $m$ planes were observed although Ga-face was decorated with angled facets of $\{10\bar{1}1\}$ planes. X-ray diffraction revealed multiple grains whose individual full width half maximum of $\omega$ scan was 200–400 arcsec. $C$ plane and $m$ plane wafers were fabricated by slicing the GaN boules.
- Japan Society of Applied Physicsの論文
- 2007-10-25
著者
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Hashimoto Tadao
Materials Department And Erato/jst Ucsb Group University Of California
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Nakamura Shuji
Materials Department University Of Cahfornia
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Wu Feng
Materials Department and NICP ERATO/JST Group, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Wu Feng
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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