Substrate Reactivity and "Controlled Contamination" in Metalorganic Chemical Vapor Deposition of GaN on Sapphire
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概要
- 論文の詳細を見る
Atomic force microscopy (AFM) and lateral force microscopy (LFM) have been used to study the effect of common substrate surface pretreatments on the metalorganic chemical vapor deposition (MOCVD) of GaN on sapphire. It appears that contaminants play a major role in the surface chemistry and strongly influence the morphology of the treated surfaces. To investigate the role of these contaminants, we have introduced the concept of "controlled contamination" (CC), namely, exposure of the sapphire surfaces to controlled amounts of potential contaminants and investigation of the resulting sapphire morphology. The results showed that sapphire, considered to be a very stable oxide surface, is clearly reactive under typical conditions employed in the high-temperature MOCVD growth of GaN.
- 社団法人応用物理学会の論文
- 1998-09-15
著者
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Speck James
Materials Department University Of California
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DENBAARS Steven
Electrical and Computer Engineering Department, University of California
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DENBAARS Steven
Materials Department and Electrical Engineering Department, University of California
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Speck J
Univ. California California Usa
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Denbaars Steven
Jst-erato中村pj:ucsb
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Denbaars Steven
Materials Department University Of California
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FINI Paul
Materiais and Electrical and Computer Engineering, University of Callfornia
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Speck James
Erato/jst Ucsb Group
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Fini P.
Materiais And Electrical And Computer Engineering University Of Callfornia
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Golan Yuval
Materials Department University Of California
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Speck James
Materials Department And Erato/jst Ucsb Group University Of California
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SPECK J.
Materials Department, University of California, Santa Barbara
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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