Critical Thickness for Onset of Plastic Relaxation in $(11\bar{2}2)$ and $(20\bar{2}1)$ Semipolar AlGaN Heterostructures

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概要

• 論文の詳細を見る

• Stress relaxation via misfit dislocation formation by slip in lattice mismatched semipolar wurtzite GaN alloys is viable due to the presence of resolved shear stresses on the basal (0001) plane. The critical thicknesses $h_{\text{c}}$ for misfit dislocation formation in AlGaN films grown by molecular-beam epitaxy on two semipolar orientations of GaN, $(20\bar{2}1)$ and $(11\bar{2}2)$, are investigated using high-resolution X-ray diffraction, confirmed with transmission electron microscopy, and compared with Matthews--Blakeslee calculations of theoretical $h_{\text{c}}$ as a function of alloy composition. The experimentally observed and calculated critical thickness values are larger for the $(20\bar{2}1)$ oriented films, consistent with the lower resolved shear stresses compared with the $(11\bar{2}2)$ orientation.

• Japan Society of Applied Physicsの論文
• 2010-11-25

著者

• Tyagi Anurag

  Solid State Lighting And Energy Center Materials Department University Of California

• Tyagi Anurag

  Electrical And Computer Engineering And Materials Departments University Of California

• Speck James

  Materials Department University Of California

• WU Feng

  Materials Department, University of California

• Speck J

  Univ. California California Usa

• Wu Feng

  Materials Department University Of California

• Speck James

  Erato/jst Ucsb Group

• Gallinat Chad

  Materials Department University Of California

• YOUNG Erin

  Materials Department, University of California

• ROMANOV Alexey

  Materials Department, University of California

• Romanov Alexey

  Materials Department University Of California

• Wu F

  米国

• Young Erin

  Materials Department University Of California

• Speck James

  Materials Department And Erato/jst Ucsb Group University Of California

• Wu Feng

  Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Speck James

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

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