High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes : Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2010-03-25

著者

• Speck James

  Materials Department University Of California

• Weisbuch Claude

  Materials Department University Of California Santa Barbara

• Hu Evelyn

  School Of Engineering And Applied Physics Harvard University

• MATIOLI Elison

  Materials Department, University of California

• FLEURY Blaise

  Materials Department, University of California

• RANGEL Elizabeth

  Materials Department, University of California

• MELO Thiago

  Materials Department, University of California

• Melo Thiago

  Materials Department University Of California

• Fleury Blaise

  Materials Department University Of California

• Weisbuch Claude

  Materials Department University Of California

• Rangel Elizabeth

  Materials Department University Of California

• Matioli Elison

  Materials Department University Of California

• Speck James

  Materials Department And Erato/jst Ucsb Group University Of California

• Speck James

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

関連論文

• High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
• Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate
• Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
• High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
• Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
• Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field
• Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
• Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
• Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
• Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
• Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides
• Plane Dependent Growth of GaN in Supercritical Basic Ammonia
• Demonstration of 426nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates
• Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
• Ammonothermal Growth of GaN on an over-1-inch Seed Crystal
• Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
• Growth of AlN by the Chemical Vapor Reaction Process
• Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
• Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
• High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates
• Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors
• Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors
• Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures
• High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
• Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC
• Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
• Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
• Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire
• Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Teansport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy : Semiconductors
• Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
• Effect of Substrate Miscut on the Direct Growth of Semipolar (1011) GaN on (100) MgAl_2O_4 by Metalorganic Chemical Vapor Deposition
• Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate
• Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime
• Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF_4-Treatment
• Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II-VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
• Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
• Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors
• MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors
• The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganie Chemical Vapor Deposition
• Morphological and Structural Transitions in GaN Filrms Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
• AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4nm
• Characterization of a-Plane GaN/(Al, Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition
• Synthesis and Characterization of Highly Resistive Epitaxial Indium-Doped SnO_2
• Non-Alloyed Schottky and Ohmic Contacts to As-Grown and Oxygen-Plasma Treated n-Type SnO_2 (110) and (101) Thin Films
• InGaN/GaN Blue Laser Diode Grown on Semipolar (3031) Free-Standing GaN Substrates
• Lattice Tilt and Misfit Dislocations in (1122) Semipolar GaN Heteroepitaxy
• m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching
• Ga Adlayer Governed Surface Defect Evolution of (0001)GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy
• Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
• High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes : Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals
• AlGaN-Claddingb-free nonpolar InGaN/GaN laser diodes
• Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy
• Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy
• Enhancement-Mode N-Polar GaN Metal--Insulator--Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz
• Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors
• High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2
• High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-$c$-Plane Oriented GaN Substrates
• Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
• Critical Thickness for Onset of Plastic Relaxation in $(11\bar{2}2)$ and $(20\bar{2}1)$ Semipolar AlGaN Heterostructures
• Enhancing the Light Extraction Efficiency of Blue Semipolar $(10\bar{1}\bar{1})$ Nitride-Based Light Emitting Diodes through Surface Patterning
• Determination of Composition and Lattice Relaxation in Semipolar Ternary (In, Al, Ga)N Strained Layers from Symmetric X-ray Diffraction Measurements
• Substrate Reactivity and "Controlled Contamination" in Metalorganic Chemical Vapor Deposition of GaN on Sapphire
• Temperature dependent capacitance-voltage analysis of unintentionally doped and Si doped Al0.82In0.18N grown on GaN
• AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers
• Propagation of Spontaneous Emission in Birefringent $m$-Axis Oriented Semipolar ($11\bar{2}2$) (Al,In,Ga)N Waveguide Structures
• Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition
• Basal Plane Stacking-Fault Related Anisotropy in X-ray Rocking Curve Widths of $m$-Plane GaN
• Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
• Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers
• Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient
• Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
• Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes
• Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal-Organic Chemical Vapor Deposition Using a Graded Growth Strategy
• High-Power, Low-Efficiency-Droop Semipolar (2021) Single-Quantum-Well Blue Light-Emitting Diodes
• Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy
• Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers
• Demonstration of Nonpolar $m$-Plane InGaN/GaN Laser Diodes
• High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar $m$-plane Bulk GaN Substrate
• Impact of Substrate Miscut on the Characteristic of $m$-plane InGaN/GaN Light Emitting Diodes
• Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (2021) Blue Light-Emitting Diodes
• Demonstration of Distributed Bragg Reflectors for Deep Ultraviolet Applications
• Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk $m$-Plane GaN Substrate
• Nonpolar $m$-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
• Growth of Bulk GaN Crystals by the Basic Ammonothermal Method
• Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
• Photoelectrochemical Properties of Nonpolar and Semipolar GaN
• Low Ohmic Contact Resistance $m$-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
• Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown $a$-Plane GaN
• Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III--Nitride Light-Emitting Diodes
• Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells
• Characterization of $a$-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition
• Green Semipolar (2021) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
• Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy
• Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
• Semipolar $(10\bar{1}\bar{1})$ InGaN/GaN Laser Diodes on Bulk GaN Substrates
• Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC
• Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
• Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors
• Effect of Substrate Miscut on the Direct Growth of Semipolar ($10\bar{1}\bar{1}$) GaN on (100) MgAl2O4 by Metalorganic Chemical Vapor Deposition

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