Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
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概要
- 論文の詳細を見る
- 2004-03-15
著者
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Nakamura Shuji
Materials Department University Of California
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Denbaars Steven
Nicp/erato Jst Ucsb Group University Of California
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Weisbuch Claude
Materials Department University Of California Santa Barbara
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Fujii Tetsuo
Nicp/erato Jst Ucsb Group University Of California
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SHARMA Rajat
Materials Department, University of California
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FUJITO Kenji
NICP/ERATO JST, UCSB Group, University of California
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DAVID Aurelien
Materials Department, University of California Santa Barbara
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SCHWACH Carole
Materials Department, University of California Santa Barbara
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PATTISON Paul
Materials Department, University of California Santa Barbara
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MARGALITH Tal
Materials Department, University of California Santa Barbara
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NAKAMURA Shuji
NICP/ERATO JST, UCSB Group, University of California
関連論文
- Correlation between Optical Polarization and Luminescence Morphology of (1122)-Oriented InGaN/GaN Quantum-Well Structures
- Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix
- High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
- Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate
- Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
- High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
- Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
- Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
- Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
- Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
- Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides
- Plane Dependent Growth of GaN in Supercritical Basic Ammonia
- Demonstration of 426nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates
- Compositional Dependence of Nonpolar m-Plane In_xGa_N/GaN Light Emitting Diodes
- Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
- Ammonothermal Growth of GaN on an over-1-inch Seed Crystal
- Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
- Growth of AlN by the Chemical Vapor Reaction Process
- Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching
- Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
- High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates
- Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors
- Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors
- Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures
- High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
- Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
- Effect of Substrate Miscut on the Direct Growth of Semipolar (1011) GaN on (100) MgAl_2O_4 by Metalorganic Chemical Vapor Deposition
- Effects of Phosphor Application Geometry on White Light-Emitting Diodes
- Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate
- Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
- Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
- AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4nm
- GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation
- InGaN/GaN Blue Laser Diode Grown on Semipolar (3031) Free-Standing GaN Substrates
- Lattice Tilt and Misfit Dislocations in (1122) Semipolar GaN Heteroepitaxy
- m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching
- Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
- High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes : Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals
- High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-$c$-Plane Oriented GaN Substrates
- 30-mW-Class High-Power and High-Efficiency Blue Semipolar (1011) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
- AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers
- Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
- Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes
- Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications