Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy

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概要

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• We have investigated the Ga-flux dependence of growth morphology and optical properties of GaN quantum dots (QDs) in AlN(0001). The QDs formed either by Stranski–Krastanov (S–K) or autosurfactant modified S–K growth depending on the incident Ga-flux during rf-plasma assisted molecular beam epitaxy. We correlated reflection high-energy electron diffraction specular intensity transients to the QD dimensions measured by atomic force microscopy. Single QD layers with growth mode dependant size, density, and wetting layer thickness were characterized by room temperature photoluminescence (PL) with a pulsed 193 nm excitation source. We used a self-consistent one-dimensional Schrödinger–Poisson calculation to identify the contribution of wetting layer quantum wells (1–4 monolayer GaN) and QDs in the PL spectra.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2006-07-25

著者

• Petroff Pierre

  Materiais And Electrical And Computer Engineering University Of Callfornia

• Brown Jay

  Materials Department University Of California

• Speck James

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Wu Feng

  Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Wu Feng

  Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

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