Stability of $(1\bar{1}00)$ $m$-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition

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概要

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• We show the stability of planar nonpolar $(1\bar{1}00)$ $m$-plane GaN thin films grown on $m$-plane 6H–SiC substrates using an AlN nucleation layer (NL) by metalorganic chemical vapor deposition (MOCVD). The stability of the $m$-plane GaN films was studied for a wide range of growth variables including reactor pressure, temperature, and group III and V flow rates. The surface morphology and crystal quality of the $m$-plane GaN films were less sensitive to changes in these growth variables than those of nonpolar $(11\bar{2}0)$ $a$-plane heteroepitaxial planar GaN films. The threading dislocation density of $m$-GaN on $m$-plane 6H–SiC was one order of magnitude lower than that of $a$-GaN on $a$-plane 6H–SiC.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-11-15

著者

• Craven Michael

  Materials Department University Of California

• Wu Feng

  Materials Department and NICP ERATO/JST Group, University of California, Santa Barbara, CA 93106, U.S.A.

• Speck James

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• DenBaars Steven

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Speck James

  Materials Department and NICP ERATO/JST Group, University of California, Santa Barbara, CA 93106, U.S.A.

• Imer Bilge

  Materials Department and NICP ERATO/JST Group, University of California, Santa Barbara, CA 93106, U.S.A.

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