Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes

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概要

• 論文の詳細を見る

• Electroluminescence (EL) efficiency of the InGaN-based light-emitting diode (LED) is the present subject of discussion. An equivalent circuit model was introduced to treat explicitly four independent current components: leakage, radiative, nonradiative, and carrier overflow. This model was used to explain the internal quantum efficiency (IQE) as a function of current, temperature, and material quality. In the low-current range, efficiency became strongly dependent on temperature as leakage and nonradiative recombination currents related to material quality shared a large part of the total current. In the high-current range, the reduced efficiency was explained by electron-overflow current. Electron-overflow current was increased by reducing temperature via freeze-out of holes. When leakage current and carrier overflow were suppressed effectively in the intermediate current range on high-quality devices, hole freeze-out was observed experimentally in electroluminescence intensity as temperature was varied.

• 2008-04-25

著者

• ASAMIZU Hirokuni

  Materials Department and Electrical Engineering Department, University of California

• FELLOWS Natalie

  Materials Department and Electrical Engineering Department, University of California

• DENBAARS Steven

  Materials Department and Electrical Engineering Department, University of California

• Masui Hisashi

  Materials Department College Of Engineering University Of California

• Schmidt Mathew

  Materials Department And Erato Jst Ucsb Group University Of California

• Nakamura Shuji

  Materials Department University Of Cahfornia

• Sato Hitoshi

  Materials Department And Electrical Engineering Department University Of California

• Asamizu Hirokuni

  Materials Department, College of Engineering, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Ivb Tommy

  Materials Research Laboratory, University of California, Santa Barbara, CA 93106-5121, U.S.A.

• Schmidt Mathew

  Materials Department, College of Engineering, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• DenBaars Steven

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Fellows Natalie

  Materials Department, College of Engineering, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Sato Hitoshi

  Materials Department, College of Engineering, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Sato Hitoshi

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

• Ive Tommy

  Materials Research Laboratory, University of California, Santa Barbara, CA 93106-5121, U.S.A.

関連論文

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• Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
• Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
• Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides
• Plane Dependent Growth of GaN in Supercritical Basic Ammonia
• Demonstration of 426nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates
• Compositional Dependence of Nonpolar m-Plane In_xGa_N/GaN Light Emitting Diodes
• Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
• Ammonothermal Growth of GaN on an over-1-inch Seed Crystal
• Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
• Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching
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• Demonstration of Nonpolar $m$-Plane InGaN/GaN Laser Diodes
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• Impact of Substrate Miscut on the Characteristic of $m$-plane InGaN/GaN Light Emitting Diodes
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• Effect of Substrate Miscut on the Direct Growth of Semipolar ($10\bar{1}\bar{1}$) GaN on (100) MgAl2O4 by Metalorganic Chemical Vapor Deposition
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