Fujiwara Tetsuya | Department Of Electrical And Computer Engineering University Of California
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概要
関連著者
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Fujiwara Tetsuya
Department Of Electrical And Computer Engineering University Of California
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Keller Stacia
Department Of Electrical And Computer Engineering University Of California
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Speck James
Materials Department University Of California
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Denbaars Steven
Department Of Electrical And Computer Engineering University Of California
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Mishra Umesh
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Keller Stacia
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Department of Materials Engineering, University of California
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Mishra U
Department Of Electrical And Computer Engineering University Of California
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Denbaars Steven
Jst-erato中村pj:ucsb
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FUJIWARA Tetsuya
Department of Electrical and Computer Engineering, University of California
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MISHRA Umesh
Department of Electrical and Computer Engineering, University of California
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Mishra Umesh
Department Of Electrical And Computer Engineering University Of California
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Masui Hisashi
Department Of Electrical And Computer Engineering University Of California
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INAGAKI Yuji
Department of Applied Quantum Physics and Nuclear Engineering Faculty of Engineering, Kyushu Univers
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KITAI Tetsuo
Faculty of Engineering, Kyushu Institute of Technology
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Keller Stacia
Electrical And Computer Engineering Department University Of California
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TATEIWA Naoyuki
Advanced Science Research Center, Japan Atomic Energy Agency
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Mishra Umesh
Materiais And Electrical And Computer Engineering University Of Callfornia
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Mishra U.
Materials Department University Of California
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Speck J
Univ. California California Usa
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Kawae Tatsuya
Department Of Applied Quantum Physics Kyushu University
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Denbaars Steven
Electrical And Computer Engineering Department University Of California
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HIGASHIWAKI Masataka
Department of Electrical and Computer Engineering, University of California
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Denbaars Steven
Nicp/erato Jst Ucsb Group University Of California
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Speck James
Erato/jst Ucsb Group
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Speck James
Materials Department And Erato/jst Ucsb Group University Of California
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Sato Yoshiaki
Department of Applied Quantum Physics, Faculty of Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Koga Mikito
Faculty of Education, Shizuoka University, Shizuoka 422-8529, Japan
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Makiyama Shun
Department of Applied Quantum Physics, Faculty of Engineering, Kyushu University, Fukuoka 819-0395, Japan
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S. Suzuki
National Institute for Material Science, Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Masui Hisashi
Materials Department College Of Engineering University Of California
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RAJAN Siddharth
Department of Electrical and Computer Engineering, University of California
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Yeluri Ramya
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
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Denninghoff Dan
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
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Lu Jing
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
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Yeluri Ramya
Department Of Electrical And Computer Engineering University Of California
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DENNINGHOFF Dan
Department of Electrical and Computer Engineering, University of California
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LU Jing
Department of Electrical and Computer Engineering, University of California
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Inagaki Yuji
Department of Applied Quantum Physics, Faculty of Engineering, Kyushu University, Fukuoka 819-0395, Japan
著作論文
- Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors
- Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors
- Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
- Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition
- Low Ohmic Contact Resistance $m$-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
- Nonlinear Susceptibility Measurement for Quadrupolar Response in a Dilute \Gamma_{3} Non-Kramers Doublet System Pr
- Nonlinear Susceptibility Measurement for Quadrupolar Response in a Dilute Γ₃ Non-Kramers Doublet System Pr₀.₀₅La₀.₉₅Pb₃