Progress in Quantum Dot Lasers : 1100nm, 1300nm and High Power Application

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1999-09-20

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Multi-Stacked InAs/InGaAs/InP Quantum Dot Laser (j_=11 A/cm^2, λ=1.9μm (77 K))
Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser ( Quantum Dot Structures)
InAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition ( Quantum Dot Structures)
High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots ( Quantum Dot Structures)
Progress in Quantum Dot Lasers : 1100 nm, 1300 nm, and High Power Applications
Vertically Coupled Quantum Dot Lasers : First Device Oriented Structures with High Internal Quantum Efficiency ( Quantum Dot Structures)
InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T_0 = 385 K) Grown by Metal Organic Chemical Vapour Deposition ( Quantum Dot Structures)
Growth and Characterization of Coherent Quantum Dots Grown by Single- and Multi-Cycle Metal-Organic Chemical Vapour Deposition ( Quantum Dot Structures)
Progress in Quantum Dot Lasers : 1100nm, 1300nm and High Power Application
InAs-GaAs Quantum Pyramid Lasers:In Situ Growth, Radiative Lifetimes and Polarization Properties
InAs-GaAs Quantum Dot Lasers : in Situ Growth, Radiative Lifetimes and Polarization Properties
Time-resolved Photoluminescence and Carrier Dynamics in Vertically-coupled Self-assembled Quantum Dots
Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics : Review Paper
Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition
Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates
Magnetoluminescence Study of Annealing Effects on the Electronic Structure of Self-organized InGaAs/GaAs Quantum Dots
Formation and Characterization of AlGaAs Quantum Wires on Vicinal (110) Surfaces

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