Ledentsov Nikolai | Technische Universitat Berlin:abraham F. Ioffe Physical Technical Institute

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Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser ( Quantum Dot Structures)
Progress in Quantum Dot Lasers : 1100 nm, 1300 nm, and High Power Applications
Vertically Coupled Quantum Dot Lasers : First Device Oriented Structures with High Internal Quantum Efficiency ( Quantum Dot Structures)
InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T_0 = 385 K) Grown by Metal Organic Chemical Vapour Deposition ( Quantum Dot Structures)
Growth and Characterization of Coherent Quantum Dots Grown by Single- and Multi-Cycle Metal-Organic Chemical Vapour Deposition ( Quantum Dot Structures)
Progress in Quantum Dot Lasers : 1100nm, 1300nm and High Power Application
InAs-GaAs Quantum Pyramid Lasers:In Situ Growth, Radiative Lifetimes and Polarization Properties
InAs-GaAs Quantum Dot Lasers : in Situ Growth, Radiative Lifetimes and Polarization Properties
Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics : Review Paper

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