Ustinov V | A.f. Ioffe Physicotechnical Inst. Russian Acad. Sci. St. Petersburg Rus

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Multi-Stacked InAs/InGaAs/InP Quantum Dot Laser (j_=11 A/cm^2, λ=1.9μm (77 K))
Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser ( Quantum Dot Structures)
High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots ( Quantum Dot Structures)
Progress in Quantum Dot Lasers : 1100 nm, 1300 nm, and High Power Applications
Vertically Coupled Quantum Dot Lasers : First Device Oriented Structures with High Internal Quantum Efficiency ( Quantum Dot Structures)
Progress in Quantum Dot Lasers : 1100nm, 1300nm and High Power Application
InAs-GaAs Quantum Pyramid Lasers:In Situ Growth, Radiative Lifetimes and Polarization Properties
InAs-GaAs Quantum Dot Lasers : in Situ Growth, Radiative Lifetimes and Polarization Properties
Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics : Review Paper

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