Kop'ev Petr | A. F. Ioffe Physical-technical Institute Of The Russian Academy Of Sciences Politekhnicheskaya 26

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Multi-Stacked InAs/InGaAs/InP Quantum Dot Laser (j_=11 A/cm^2, λ=1.9μm (77 K))
Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser ( Quantum Dot Structures)
Vertically Coupled Quantum Dot Lasers : First Device Oriented Structures with High Internal Quantum Efficiency ( Quantum Dot Structures)
InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T_0 = 385 K) Grown by Metal Organic Chemical Vapour Deposition ( Quantum Dot Structures)
Growth and Characterization of Coherent Quantum Dots Grown by Single- and Multi-Cycle Metal-Organic Chemical Vapour Deposition ( Quantum Dot Structures)
Collective Resonance and Form-Factor of Homogeneous Broadening Semiconductors

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