InAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition (<Special Issue> Quantum Dot Structures)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-06-30
著者
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Werner P
Max‐planck‐inst. Mikrostrukturforsch. Halle Deu
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HEINRICHSDORFF Frank
Technische Universitat Berlin
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KROST Alois
Technische Universitat Berlin
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KIRSTAEDTER Nils
Technische Universitat Berlin
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MAO Ming-Hua
Technische Universitat Berlin
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GRUNDMANN Marius
Technische Universitat Berlin
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BIMBERG Dieter
Technische Universitat Berlin
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KOSOGOV Alexander
Technische Universitat Berlin
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WERNER Peter
Max-Planck-Institut fur Mikrostrukturphysik
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HEINRICHSDORFF Frank
Institut fur Festkorperphysik, Technische Universitat Berlin
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Grundmann Marius
Institut Fur Festkorperphysik Tu-berlin
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Bimberg D
Institut Fur Festkorperphysik Technische Universitat Berlin
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Kosogov A
Max-planck-institut Fur Mikrostrukturphysik
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Kosogov Alexander
Technische Universitat Berlin:max-planck-institut Fur Mikrostrukturphysik
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Krost A
Otto-von-guericke-university Magdeburg Faculty Of Natural Sciences Institut Of Experimental Physics
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Krost Alois
Institut Fur Festkorperphysik Tu-berlin
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Heinrichsdorff F
Technische Univ. Berlin Berlin Deu
関連論文
- InAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition ( Quantum Dot Structures)
- High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots ( Quantum Dot Structures)
- Progress in Quantum Dot Lasers : 1100 nm, 1300 nm, and High Power Applications
- InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T_0 = 385 K) Grown by Metal Organic Chemical Vapour Deposition ( Quantum Dot Structures)
- Growth and Characterization of Coherent Quantum Dots Grown by Single- and Multi-Cycle Metal-Organic Chemical Vapour Deposition ( Quantum Dot Structures)
- Progress in Quantum Dot Lasers : 1100nm, 1300nm and High Power Application
- InAs-GaAs Quantum Pyramid Lasers:In Situ Growth, Radiative Lifetimes and Polarization Properties
- InAs-GaAs Quantum Dot Lasers : in Situ Growth, Radiative Lifetimes and Polarization Properties
- Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics : Review Paper
- Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition
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